PMV230ENEAR: 60V, N-channel Trench MOSFET, SOT23 package, Logic level, Fast switching

Nexperia

The PMV230ENEAR is a N-channel enhancement mode Field-Effect Transistor (FET) encapsulated in a compact SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Utilizing Trench MOSFET technology, this component offers improved performance in a variety of electronic circuits. Its design is optimized for fast switching and logic level compatibility, making it suitable for high-speed applications.

This MOSFET is equipped with ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM, ensuring durability against sudden electrostatic discharges. Additionally, it is AEC-Q101 qualified, indicating its reliability in automotive-grade applications. The PMV230ENEAR's small form factor combined with its robust performance characteristics makes it an excellent choice for space-constrained applications requiring efficient switching.

• Drain-Source Voltage (VDS): 60V
• Gate-Source Voltage (VGS): ±20V
• Drain Current (ID): 1.5A at VGS = 10V, Tamb = 25°C
• Drain-Source On-State Resistance (RDSon): 176 - 222mΩ at VGS = 10V, ID = 1.5A
• Total Power Dissipation (Ptot): 480mW at Tamb = 25°C
• Junction Temperature (Tj): -55 to 150°C
• Static and Dynamic Characteristics: Including gate threshold voltage, leakage currents, transconductance, and charge parameters.

• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits

N-channel MOSFETs are fundamental components in electronic engineering, serving as efficient switches or amplifiers in circuits. They operate by using an electric field to control the conductivity of a channel, allowing or preventing current flow. N-channel types, such as the PMV230ENEAR, have a higher electron mobility compared to P-channel types, making them more efficient for many applications.

When selecting an N-channel MOSFET, engineers consider parameters such as drain-source voltage, gate-source voltage, drain current, and power dissipation. The PMV230ENEAR's specifications, including its 60V drain-source voltage and 1.5A drain current capability, make it suitable for a variety of applications. Its compact SOT23 package is advantageous for space-constrained designs.

Trench MOSFET technology, as used in the PMV230ENEAR, offers reduced on-state resistance and improved switching performance, which are critical for high-efficiency applications. Additionally, features like ESD protection and automotive-grade qualification (AEC-Q101) are important for applications requiring high reliability and robustness.

Overall, the selection of an N-channel MOSFET involves a balance between electrical specifications, packaging, and additional features like ESD protection. The PMV230ENEAR's combination of high performance, compact packaging, and reliability features make it an excellent choice for engineers designing electronic systems.