The 2N7002K-T1-GE3 is an N-Channel MOSFET from Vishay Siliconix, designed for fast switching applications. It operates at a drain-source voltage (VDS) of 60V, with a maximum drain current (ID) of 0.3A. The device features a low on-resistance (RDS(on)) of 2 Ohm when VGS is 10V, contributing to its efficiency in circuit operation. Additionally, it boasts a low threshold voltage of 2V (typical) and a fast switching speed of 25ns, enhancing its performance in high-speed circuits.
This MOSFET is encapsulated in a compact SOT-23 (TO-236) package, making it suitable for space-constrained applications. It also offers low input and output leakage, low input capacitance of 25pF, and is equipped with 2000V ESD protection, ensuring reliability in various operating conditions. The 2N7002K-T1-GE3 is designed for applications requiring high-speed switching and low voltage operation, making it an ideal choice for direct logic-level interfaces, drivers, battery operated systems, and solid-state relays.
MOSFET
N-Channel MOSFETs are a type of field-effect transistor (FET) widely used in electronic circuits for switching and amplifying signals. They operate by using an electric field to control the conductivity of a channel in a semiconductor material. N-Channel MOSFETs are particularly noted for their high efficiency and fast switching capabilities.
When selecting an N-Channel MOSFET, several key parameters should be considered, including the drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and on-resistance (RDS(on)). These parameters determine the device's ability to handle voltage and current in specific applications. Additionally, the switching speed, represented by the turn-on and turn-off times, is critical for applications requiring fast switching.
The threshold voltage (VGS(th)) is another important factor, indicating the minimum gate-source voltage required to turn the device on. Lower threshold voltages can be advantageous in low-voltage applications. Input and output capacitances affect the switching speed and power consumption during switching events.
N-Channel MOSFETs are used in a wide range of applications, from power management and conversion to signal processing and high-speed switching circuits. Their versatility and efficiency make them essential components in modern electronic design.