2N7002L: N-Channel MOSFET, 60V, 200mA, SOT-23

onsemi

The 2N7002L is an N-Channel MOSFET produced using onsemi's high cell density, DMOS technology. This component is designed to offer low on-state resistance while ensuring rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications, making it a versatile choice for various electronic circuits.

Featuring a high-density cell design, the 2N7002L achieves low RDS(on), making it an efficient choice for power management tasks. Its ability to act as a voltage-controlled small signal switch adds to its flexibility in circuit design. The component's high saturation current capability and ruggedness make it a reliable option for demanding environments.

• Drain-to-Source Voltage (VDSS): 60 V
• Gate-Source Voltage (VGSS): ±20 V, Non-Repetitive (tp < 50 ms) ±40 V
• Maximum Drain Current (ID): 200 mA Continuous, 500 mA Pulsed
• Maximum Power Dissipation (PD): 400 mW, Derated above 25°C
• Thermal Resistance, Junction to Ambient (RθJA): 625 °C/W
• Gate Threshold Voltage (VGS(th)): 1 to 2.5 V
• Static Drain-Source On-Resistance (RDS(on)): 1.2 to 7.5 Ω
• Drain-Source On-Voltage (VDS(on)): 0.6 to 3.75 V

• Small servo motor control
• Power MOSFET gate drivers
• Various switching applications

N-Channel MOSFETs like the 2N7002L are fundamental components in electronic design, offering a means to efficiently control power distribution in circuits. These transistors operate by allowing current to flow between the drain and source terminals when a voltage is applied to the gate terminal, making them ideal for switching and amplifying signals.

When selecting an N-Channel MOSFET, important considerations include the drain-to-source voltage, gate-source voltage, maximum drain current, and power dissipation capabilities. The thermal characteristics are also crucial, as they affect the device's reliability and performance under different operating conditions.

The 2N7002L's low on-state resistance is beneficial for reducing power loss and improving efficiency in applications. Its compact SOT-23 package is suitable for space-constrained designs. Engineers should also consider the switching speed, gate charge, and capacitance characteristics to ensure compatibility with their circuit's requirements.

In summary, the 2N7002L offers a balance of performance, reliability, and efficiency, making it a suitable choice for a wide range of low-voltage, low-current applications. Understanding its specifications and how they align with the requirements of the intended application is key to making an informed selection.