BSS138NL6327: N-channel SIPMOS Small-Signal-Transistor, 60V, 0.23A, 3.5Ω
Infineon

The BSS138NL6327 is an N-channel enhancement mode Field-Effect Transistor (FET) designed for use in switching applications. It features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 0.23A at 25°C, making it suitable for a variety of low-power applications. The device is characterized by its low on-state resistance (RDS(on)) of maximum 3.5Ω, which enhances its efficiency in circuit operation.

This transistor is optimized for logic level drive, allowing it to be directly driven by logic circuits without the need for additional level shifting. Its dv/dt rating and ESD sensitivity class 0 make it robust for demanding environments. The BSS138NL6327 is also notable for its environmental compliance, being Pb-free, RoHS compliant, and halogen-free, in addition to being qualified according to AEC Q101 standards for automotive applications.

Key Specifications and Features

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 0.23A at 25°C
  • Pulsed Drain Current (ID,pulse): 0.92A
  • On-State Resistance (RDS(on)): Max 3.5Ω
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (Ptot): 0.36W at 25°C
  • Operating and Storage Temperature: -55 to 150°C
  • Dynamic Characteristics: Input Capacitance (Ciss) 32-41pF, Output Capacitance (Coss) 7.2-9.5pF, Reverse Transfer Capacitance (Crss) 2.8-3.8pF

BSS138NL6327 Datasheet

BSS138NL6327 datasheet (PDF)

BSS138NL6327 Substitutes
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Applications

  • Switching applications
  • Logic level drive circuits
  • Automotive electronics
  • Power management

Category

Transistor

General information

Field-Effect Transistors (FETs) are a type of transistor used in electronic circuits for switching or amplifying signals. FETs are characterized by their voltage-controlled operation, as opposed to Bipolar Junction Transistors (BJTs) which are current-controlled. This makes FETs particularly useful in applications where high input impedance is desirable.

When selecting a FET for a specific application, important considerations include the drain-source voltage (VDS), the drain current (ID), the on-state resistance (RDS(on)), and the gate-source voltage (VGS). These parameters determine the FET's ability to handle power and its efficiency in the circuit. Additionally, the thermal characteristics and ESD sensitivity are also critical for ensuring the reliability and longevity of the device in various operating conditions.

FETs are widely used in a variety of applications, from simple switches to complex logic circuits and power management systems. Their low power consumption, high switching speed, and compatibility with logic level signals make them especially suitable for modern electronic devices.

In summary, when choosing a FET, engineers must carefully consider the device's electrical characteristics, thermal performance, and suitability for the intended application. This ensures optimal performance and reliability of the electronic system.

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