BSS138-7-F: N-Channel Enhancement Mode MOSFET, 50V, 200mA, 3.5Ω
Diodes Inc.

The BSS138-7-F is an N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It features a low on-resistance (RDS(ON)) of 3.5Ω at VGS = 10V, which minimizes power loss while maintaining superior switching performance. This component is characterized by its low gate threshold voltage, fast switching speed, and low input/output leakage, making it suitable for system and load switch applications.

This MOSFET is packaged in a small SOT23 case, offering a compact solution for space-constrained designs. It is fully RoHS compliant and designated as a "Green" device, indicating it is free from halogen and antimony. The BSS138-7-F is ideal for engineers looking for a reliable switch with low power consumption and high switching efficiency.

Key Specifications and Features

  • Drain-Source Voltage (VDSS): 50V
  • Drain Current (ID): 200mA
  • Static Drain-Source On-Resistance (RDS(ON)): 3.5Ω at VGS = 10V
  • Gate Threshold Voltage (VGS(TH)): 0.5 - 1.5V
  • Input Capacitance (Ciss): 50pF
  • Power Dissipation (PD): 300mW
  • Operating Temperature Range: -55 to +150°C

BSS138-7-F Datasheet

BSS138-7-F datasheet (PDF)

BSS138-7-F Substitutes
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Applications

  • System/Load Switch applications
  • High efficiency power management

Category

Transistors

General information

N-Channel Enhancement Mode MOSFETs are a type of MOSFET designed for switching electronic signals. These components are widely used in power management applications due to their efficiency and ability to handle significant power levels. N-Channel MOSFETs are characterized by their ability to conduct current between the drain and source when a positive voltage is applied to the gate relative to the source.

When selecting an N-Channel MOSFET, engineers should consider parameters such as the drain-source voltage (VDSS), drain current (ID), and static drain-source on-resistance (RDS(ON)). These parameters determine the MOSFET's ability to handle the required power levels and efficiency in a circuit. The gate threshold voltage (VGS(TH)) is also important, as it affects the voltage required to turn the device on.

N-Channel MOSFETs are used in a variety of applications, including power supply circuits, motor controllers, and as switches in high-efficiency power management systems. Their low on-resistance and fast switching capabilities make them suitable for applications requiring efficient power handling and control.

In addition to the technical specifications, packaging and thermal management are also important considerations. Devices like the BSS138-7-F, with its compact SOT23 packaging, offer a solution for space-constrained applications while ensuring adequate heat dissipation for reliable operation.

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