BSS138LT3G: N-Channel MOSFET, 200 mA, 50 V, SOT-23
onsemi

The BSS138LT3G from onsemi is a N-Channel MOSFET that operates at a maximum of 200 mA and 50 V, encapsulated in a compact SOT-23 package. This component is designed to handle low to moderate power requirements in electronic circuits, making it suitable for a wide range of applications.

Key features include a low threshold voltage (VGS(th)) ranging from 0.85 V to 1.5 V, which allows for efficient operation in low voltage scenarios. Additionally, the device is characterized by its low static drain-to-source on-resistance (RDS(on)) of 3.5 Ω when VGS is 5.0 V and ID is 200 mA, contributing to its efficiency in conducting current. The BSS138LT3G is also notable for its robustness, with a maximum operating and storage temperature range of -55 to 150 °C, ensuring reliable performance across various environmental conditions.

Key Specifications and Features

  • Drain-to-Source Voltage (VDSS): 50 V
  • Gate-to-Source Voltage (VGS): ±20 V
  • Continuous Drain Current (ID) at 25°C: 200 mA
  • Pulsed Drain Current (IDM): 800 mA
  • Static Drain-to-Source On-Resistance (RDS(on)): 3.5 Ω at VGS = 5.0 V, ID = 200 mA
  • Gate-Source Threshold Voltage (VGS(th)): 0.85 V to 1.5 V
  • Total Power Dissipation (PD) at 25°C: 225 mW
  • Operating and Storage Temperature Range: -55 to 150 °C
  • Thermal Resistance, Junction-to-Ambient (RθJA): 556 °C/W

BSS138LT3G Datasheet

BSS138LT3G datasheet (PDF)

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Applications

  • DC-DC converters
  • Power management in portable and battery-powered products
    • Computers
    • Printers
    • PCMCIA cards
    • Cellular and cordless telephones

Category

Transistor

General information

N-Channel MOSFETs are a type of field-effect transistor (FET) that are widely used in electronic circuits for switching and amplification purposes. These components are characterized by their ability to control high current flow using a relatively low voltage, making them essential in power management and signal processing applications.

When selecting an N-Channel MOSFET, engineers should consider parameters such as drain-to-source voltage (VDSS), gate-to-source voltage (VGS), drain current (ID), and static drain-to-source on-resistance (RDS(on)). These parameters determine the MOSFET's capability to handle voltage and current in specific applications, as well as its efficiency and heat dissipation characteristics.

Another important consideration is the threshold voltage (VGS(th)), which indicates the minimum gate-to-source voltage required to turn the device on. A lower threshold voltage can be advantageous in low voltage applications, where power efficiency is critical.

Package type also plays a crucial role, especially in space-constrained designs. The SOT-23 package of the BSS138LT3G, for example, offers a balance between compactness and thermal performance, making it suitable for a variety of applications, including portable and battery-powered devices.

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