The 1N5819HW-7-F is a Schottky barrier rectifier designed for surface mount applications. It features a peak repetitive reverse voltage (VRRM) of 40V and an average rectified output current (IO) of 1.0A. The device offers a low forward voltage drop (VF) of maximum 450mV, contributing to its high efficiency and low power loss characteristics. The Schottky rectifier also exhibits a low reverse leakage current (IR) of maximum 50µA, enhancing its performance in high-temperature environments.
Guard ring die construction provides transient protection, ensuring reliability and stability under transient conditions. The rectifier is encapsulated in a SOD123 package, known for its compact size and durability. The package material is molded plastic with a UL flammability classification rating of 94V-0, indicating its suitability for use in safety-critical applications.
High surge capability, high current capability, and low forward voltage drop make this device ideal for a variety of applications including low-voltage, high-frequency inverters, free wheeling, and polarity protection.
Diode
Schottky barrier rectifiers are semiconductor diodes designed with a metal-semiconductor junction rather than a p-n junction, which is common in standard diodes. This unique construction allows Schottky diodes to have very low forward voltage drops and fast switching capabilities, making them highly efficient for applications requiring rectification, voltage clamping, and protection against reverse polarity.
When selecting a Schottky barrier rectifier, engineers should consider parameters such as the peak repetitive reverse voltage, average rectified output current, forward voltage drop, and reverse leakage current. These parameters are critical in ensuring that the diode meets the application's power handling, efficiency, and thermal requirements.
Schottky diodes are widely used in power supply circuits, voltage regulators, and DC-DC converters due to their efficiency and fast response. They are also employed in high-frequency applications, such as RF mixers and detectors, where their low forward voltage drop and fast switching speeds are advantageous.
In addition to technical specifications, the package type and thermal characteristics are also important considerations. The package must support the thermal dissipation requirements of the application, and the diode's operating temperature range should align with the environmental conditions in which the device will be used.