1N4448: Small Signal Diode, DO-35, 100V, 300mA, 4ns reverse recovery
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The 1N4448 is a small signal diode designed for high-speed switching applications. Packaged in a DO-35 form factor, it is characterized by its compact size and ease of integration into various circuits. This diode offers a maximum repetitive reverse voltage of 100V and can handle a forward current of up to 300mA. An important feature of the 1N4448 is its fast reverse recovery time of 4ns, making it suitable for high-frequency operations.

The diode is encapsulated in a hermetically sealed glass package, ensuring reliability and durability under various environmental conditions. Its cathode is marked with a black band for easy identification. The 1N4448 is available in bulk or tape and reel packaging, catering to different assembly requirements.

Key Specifications and Features

  • Package Type: DO-35
  • Maximum Repetitive Reverse Voltage (VRRM): 100V
  • DC Forward Current (IF): 300mA
  • Recurrent Peak Forward Current (IFM): 400mA
  • Non-repetitive Peak Forward Surge Current (IFSM): 1A (pulse width = 1.0s), 4A (pulse width = 1.0µs)
  • Reverse Recovery Time (trr): 4ns
  • Operating Junction Temperature Range (TJ): -55 to +175°C
  • Storage Temperature Range (TSTG): -65 to +200°C

1N4448 Datasheet

1N4448 datasheet (PDF)

1N4448 Substitutes
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Applications

  • High-speed switching circuits
  • Signal processing
  • Voltage clamping
  • Protection circuits

Category

Diodes

General information

Small signal diodes like the 1N4448 are fundamental components in electronic circuits, primarily used for their switching and rectifying capabilities. They allow current to flow in one direction while blocking it in the opposite direction, making them essential for controlling the flow of electrical signals. When selecting a small signal diode, engineers consider parameters such as the maximum repetitive reverse voltage, forward current, reverse recovery time, and packaging type to ensure compatibility with their application's requirements.

The 1N4448 is particularly notable for its fast reverse recovery time, which is critical in high-speed switching applications where rapid transitions between conducting and non-conducting states are required. Its compact DO-35 package facilitates easy integration into a wide range of circuits, from signal processing to protection schemes. The diode's hermetic seal provides reliable performance under various environmental conditions.

In addition to technical specifications, practical considerations such as packaging options and thermal characteristics also play a role in component selection. The 1N4448's availability in bulk and tape and reel packaging options caters to different production scales, while its thermal resistance ensures stable operation within its specified temperature ranges.

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