BAT54A-7-F: SMT Schottky Barrier Diode, 30V, 200mA, 0.8V max VF, SOT23
Diodes Inc.

The BAT54A-7-F is a surface-mount Schottky Barrier Diode designed for high-speed switching applications. It features a low turn-on voltage and a maximum forward voltage of 0.8V, allowing for efficient operation. The component is encapsulated in a SOT23 package, providing a compact solution for space-constrained applications. This diode is designed with a PN Junction Guard Ring, offering enhanced protection against transient and Electrostatic Discharge (ESD) events, making it suitable for sensitive electronic circuits.

The device is compliant with RoHS regulations, ensuring an environmentally friendly option for electronic designs. It is capable of handling an average rectified output current of 200mA and supports a peak repetitive reverse voltage of 30V. The BAT54A-7-F is characterized by its fast switching capability, making it an ideal choice for high-frequency applications. The diode's mechanical and thermal properties are optimized for reliability, including a moisture sensitivity level of 1 and a maximum power dissipation of 200mW.

关键规格和特性

  • Package: SOT23 (Standard)
  • Peak Repetitive Reverse Voltage (VRRM): 30V
  • Average Rectified Output Current (IO): 200mA
  • Forward Voltage (VFmax): 0.8V
  • Reverse Leakage Current (IRmax): 2μA
  • Power Dissipation (PD): 200mW
  • Thermal Resistance, Junction to Ambient (RθJA): 500°C/W
  • Operating Temperature Range: -65 to +150°C

BAT54A-7-F 数据手册

BAT54A-7-F 数据表(PDF)

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应用

  • High-speed switching circuits
  • Power supply circuits
  • DC-DC converters
  • Battery management systems

类别

二极管

常规信息

Schottky Barrier Diodes are semiconductor devices that allow current to flow in one direction with a very low forward voltage drop, making them highly efficient for applications requiring fast switching and low power loss. They are characterized by their use of a metal-semiconductor junction as the diode's barrier, as opposed to the PN junction found in standard diodes. This configuration results in a lower forward voltage and faster switching speed.

When selecting a Schottky Barrier Diode, engineers should consider parameters such as the maximum reverse voltage, forward current, forward voltage drop, and package type. These characteristics determine the diode's suitability for specific applications, including power conversion, voltage clamping, and protection circuits. The low forward voltage drop and fast switching capability make Schottky diodes ideal for high-frequency and high-efficiency applications.

Another important consideration is the diode's thermal performance, as high-speed switching can generate significant heat. The thermal resistance and power dissipation ratings provide insight into the diode's ability to manage heat under operational conditions. Additionally, protection features such as guard rings for transient and ESD protection are valuable for enhancing the reliability and longevity of electronic circuits.

Overall, Schottky Barrier Diodes are versatile components that offer significant advantages for a wide range of electronic applications. Their efficiency, speed, and compact form factor make them essential for modern electronic designs, particularly in power management and signal processing circuits.

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